Passivating Polysilicon Recombination Junctions for Crystalline Silicon Solar Cells
نویسندگان
چکیده
Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such key element in interconnection of tandem devices with cell, and they could be used simplify processing sequence single-junction cells interdigitated back contacts (IBCs). tunneling require high temperatures crystallize layers; however, this also facilitates interdiffusion dopants, whereas tunnelling relies on degenerate doping concentrations constituent sharp interfaces between them. Using secondary-ion mass spectrometry (SIMS) dynamic mode, it is found that dopants diffuse readily across interface, thus compromising junction. The undesired diffusion suppressed by modifying interface C, O, or combination these. Moreover, modification does not interfere H, an essential passivate defects at wafer. Thus, implied open-circuit voltages (iVoc) up 740 mV demonstrated for resistivities less than 40 mΩ cm2.
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ژورنال
عنوان ژورنال: Physica Status Solidi (rrl)
سال: 2021
ISSN: ['1862-6254', '1862-6270']
DOI: https://doi.org/10.1002/pssr.202100272